The surfacetension of molten silicon was successfully measured by an oscillating drop method using electromagnetic levitation over a wide temperature range from 1100 to 1500°C including the undercooling condition of ΔT ≈ 300 K. Single crystals of silicon heavily doped with B and Sb (resistivity as low as ) were successfully melted and levitated. The surfacetension of molten silicon was 783.5 × 10−3 N/m at the melting point of 1410°C within the measurement accuracy of 3–4%; its temperature coefficient was −0.65 × 10−3 N/m·K. Secondary ion mass spectroscopy (SIMS) analysis showed that O and Sb evaporated during melting, while the B concentration after melting was unchanged. This means that surfacetension and its measured temperature dependence correspond to those for a contamination-free silicon melt.
Hot keywords of USA KINO:contact angle, contact angle measurement, contact angle meter, contact angle goniometer, surface tensiometer, interfacial tensiometer, surface tension measurement, surface tension, surface tensiometry, contact angle measurement equipment and device, calculating surfac free energy, Determining Critical Micelle Concentration (CMC) of surfactant, made in China Method for choosing surface tensiometer NEW Method for choosing contact angle meter (goniometer) NEW Method for choosing interfacial tension meter NEW
MainPro : contact angle,contact angle meter,contact angle goniometer,surface tension,surface tensiometer